Crystal size | ~10 mm |
Electrical properties | Semiconductor, Topological Insulator, Thermoelectric material |
Crystal structure | Monoclinic C |
Unit cell parameters | a = 1.430 nm, b = 0.403 nm, c = 0.986 nm, α = γ = 90°, β = 95.40° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system
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Powder X-ray diffraction (XRD) of a single crystal As2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker
Stoichiometric analysis of a single crystal As2Te3 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal As2Te3. Measurement was performed with a 785 nm Raman system at room temperature.
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