CuS is a member of metal chalcogenides (see our GaSe and GaTe products). It has a layered structure (lamellar) with weak interlayer coupling. In the bulk form, it is a direct band gap semiconductor with 1.6 eV band gap. Experimentally, monolayers are yet to be discovered. The size of the sample is around few mm in size and each order contains 3-6 number of flakes. Because of larger coupling between CuS layers, this crystal is harder to exfoliate compared to HOPG, MoS2, etc.
Possible applications:
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