CrSeBr is a layered magnetic semiconductor exhibiting highly anisotropic electronic structure. It has been predicted to have a narrow band gap of 0.78 eV. Overall, CrSeBr is a member of CrXBr (X=S, Se) layered crystals and has Pmmn orthorhombic space group crystal structure (see images). Our CrSeBr vdW crystals have been synthesized at perfect 1:1:1 Cr:Se:Br stoichiometry to ensure perfect magnetic, electronic, and optical quality. Crystals have confirmed 99.9995% purity and excellent crystalline characteristics.
The properties of CrSeBr crystals
Sample size | Each order contains 3-5 mm sized crystals |
Material properties | 2D magnet and narrow gap excitonic semiconductor |
Crystal structure | Orthorhombic phase (Pmmn) |
Unit cell parameters | a=0.699 nm b=0.790 nm; c=0.989 nm; α=90 β=91.01 γ=90° |
Production method | Chemical vapor transport (99.9995% or higher purity) |
Other characteristics |
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