The graphene film as well as the h-BN film is grown via CVD method on the copper foil, then transferred onto the SiO2/Si wafer.To view the characterizations of the film before the transfer, see our related product Graphene on Copper Foil and h-BN on Copper foil. Properties of Silicon/Silicon Dioxide Wafers:Oxide Thickness: 285 nm Color: Violet Wafer thickness: 525 micron Resistivity: 0.001-0.005 ohm-cm Type/Dopant: P/Boron Orientation: <100> Front Surface: Polished Back Surface: Etched Applications:Graphene/hBN interfaces are used where the graphene needs to be precisely gated, for increased mobility, and for reduced scattering. h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene. Using our h-BN on SiO2/Si wafers in conjuction with graphene will encourage you to explore graphene heterostructures for transistor applications Our graphene/h-BN films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details. We can offer custom sizes of graphene/h-BN films on a 4" wafer. Please contact us at info@graphenelab.com for more details. Academic References / Read MoreGraphene Growth Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314 Graphene Transfer Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363 Toward Clean and Crackless Transfer of Graphene Liang et.al.,ACS Nano, 2011, 5 (11), pp 9144–9153 Graphene/h-BN Heterostructures
Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures Materials Today Physics, Science Direct: Vol 2, September 2017, pp 6-34 Volume 2, September 2017, Pages 6-34Author links open overlay panel
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