상품명 | CVD Monolayer MoSe2 on c-cut Sapphire |
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상품요약정보 | CVD Monolayer MoSe2 on c-cut Sapphire |
국내·해외배송 | 국내배송 |
배송방법 | 택배 |
배송비 | 2,500원 (50,000원 이상 구매 시 무료) |
SNS 상품홍보 | |
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상품명 | 상품수 | 가격 |
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CVD Monolayer MoSe2 on c-cut Sapphire | 0 ( ) |
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This product contains MoSe2 monolayers on c-cut sapphire substrates. Please note that these MoSe2 monolayers do not reach full area coverage on sapphire or SiO2/Si samples. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoSe2 sheet. Synthesized monolayer MoSe2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness (please see the technical specifications), however few-layer regions are also anticipated to be observed.
Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized
Sample Properties
Sample size | 1cm x 1cm square shaped |
Substrate type | (0001) c-cut sapphire |
Coverage | Does not reach full area coverage |
Electrical properties | 1.58 eV Direct Bandgap Semiconductor |
Crystal structure | Hexagonal Phase |
Unit cell parameters | a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120° |
Production method | Low pressure Chemical Vapor Deposition (LPCVD) |
Characterization methods | Raman, photoluminescence, TEM, EDS |
Specifications
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