상품명 | GaS (alpha phase Gallium sulfide) |
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상품요약정보 | GaS (alpha phase Gallium sulfide) |
국내·해외배송 | 국내배송 |
배송방법 | 택배 |
배송비 | 2,500원 (50,000원 이상 구매 시 무료) |
SNS 상품홍보 | |
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옵션선택 |
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상품명 | 상품수 | 가격 |
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GaS (alpha phase Gallium sulfide) | 0 ( ) |
할인가가 적용된 최종 결제예정금액은 주문 시 확인할 수 있습니다.
GaS (alpha phase) is a semiconductor with an indirect band gap of ~2.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-GaS belongs to the group-13 post-transition metal monochalcogenides.
The Gallium sulfide crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm. The crystals are yellow colored and transparent.
Crystal size | ~10 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Click on an image to zoom
X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14
Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.
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