GaSe (2H phase) is a semiconductor with an indirect band gap of ~2.1 eV. GaSe has been used as a semiconductor, photoconductor, a second harmonic generation crystal in nonlinear optics and as a far-infrared conversion material. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GaSe belongs to the group-13 post-transition metal monochalcogenides.
The 2H phase of Gallium Selenide has a typical lateral size of ~0.6-0.8 cm and has a dark-copper metallic appearance.
Crystal size | ~10 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
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X-ray diffraction on a GaSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (001) with h = 4, 6, 8, 10, 12
Powder X-ray diffraction (XRD) of a single crystal GaSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal GaSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GaSe. Measurement was performed with a 785 nm Raman system at room temperature.
1. Pil Ju Ko et al., "Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector", Nanotechnology 27 (32), 325202 (2016), link to article:
http://iopscience.iop.org/article/10.1088/0957-4484/27/32/325202/meta
2. Yecun Wu et al., "Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering", Nano Energy 32, 157-164 (2017), link to article:
http://www.sciencedirect.com/science/article/pii/S2211285516305973
2. Hai Huang et al., "Highly sensitive phototransistor based on GaSe nanosheets", APL 107, 143112 (2015), link to article:
http://scitation.aip.org/content/aip/journal/apl/107/14/10.1063/1.4933034
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