Crystal size | ~10 mm |
Electrical properties | Semiconductor |
Crystal structure | Orthorhombic |
Unit cell parameters | a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
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X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.
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