Crystal size | ~1 mm |
Electrical properties | Insulator/Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120° |
Type | Synthetic |
Purity | Grade A |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system
Click on an image to zoom
X-ray diffraction on a hexagonal boron nitride single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3
Raman spectrum of a single crystal hexagonal boron nitride (h-BN). Measurement was performed with a 785nm Raman system at room temperature.
Device at left side: Fabrication of a high mobiltity bilayer graphene. This field effect transistor is fabricated using the polymer 2D_CL_PC ( click here ). The device is composed out of four 2D layers. The bilayer graphene is encapsulated between two hexagonal boron nitride crystals (h-BN). The fourth layer is a thin layer of graphite (HOPG) which is used as a backgate. Scale bar is 20μm. Device at right side: This device is similar to the one at the left side, here we added on the top hexagonal boron nitride layer a gold electrode in order to apply a top gate voltage to the hBN encapsulated bilayer graphene. Scale bar is 20μm
1. G. Cassabois et al., "Hexagonal boron nitride is an indirect bandgap semiconductor", Nature photonics 10, 262-266 (2016), link to article:
http://www.nature.com/nphoton/journal/v10/n4/full/nphoton.2015.277.html
2. S. Dufferwiel et al. "Exciton-polaritons in van der Waals heterostructures embedded in tunable microcavities", Nature Communications 6, 8579 (2015), link to article:
http://www.nature.com/articles/ncomms9579?WT.ec_id=NCOMMS-20151010
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