Crystal size | ~10 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
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X-ray diffraction on a Hafnium Diselenide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 3, 4, 5
Powder X-ray diffraction (XRD) of a single crystal HfSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal HfSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal HfSe2. Measurement was performed with a 785 nm Raman system at room temperature.
1. Moonshik Kang et al., "Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment", Nanoscale (2016), link to article:
http://pubs.rsc.org/en/content/articlehtml/2016/nr/c6nr08467b
2. Lei Yin et al., "Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2", APL 109, 213105 (2016), link to article:
http://aip.scitation.org/doi/abs/10.1063/1.4968808
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