Crystal size | ~8-10 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX:Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system
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X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18
Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).
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