상품명 | Monolayer WSe2 Triangles on c-cut Sapphire |
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상품요약정보 | Monolayer WSe2 Triangles on c-cut Sapphire |
국내·해외배송 | 국내배송 |
배송방법 | 택배 |
배송비 | 2,500원 (50,000원 이상 구매 시 무료) |
SNS 상품홍보 | |
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상품명 | 상품수 | 가격 |
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Monolayer WSe2 Triangles on c-cut Sapphire | 0 ( ) |
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Isolated monolayer thickness WSe2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness WSe2 triangular flakes randomly distributed across sapphire substrate. While some regions reach continuity with coalesced WSe2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer WSe2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.
Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized
Sample Properties
Sample size | 1cm x 1cm square shaped |
Substrate type | (0001) c-cut sapphire |
Coverage | Isolated and partially merged monolayer triangles |
Electrical properties | 1.62 eV Direct Bandgap Semiconductor |
Crystal structure | Hexagonal Phase |
Unit cell parameters | a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120° |
Production method | Low pressure Chemical Vapor Deposition (LPCVD) |
Characterization methods | Raman, photoluminescence, TEM, EDS |
Specifications
Publications:
Enabling valley selective exciton scattering in monolayer WSe2 through upconversion, Nature Communications, 8,14927 (2017)
doi:10.1038/ncomms14927
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