Crystal size | ~ mm |
Electrical properties | Semiconductor |
Crystal structure | Orthorhombic |
Unit cell parameters | Depends on the composition in the alloy. For P/As ratio of ~1 : a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90° |
Type | Synthetic |
Purity | >99.995% |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Click on an image to zoom
Powder X-ray diffraction (XRD) of a single crystal P-As. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal P-As by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal P-As. Measurement was performed with a 785 nm Raman system at room temperature.
1. Publications to be added soon!
상품의 사용후기를 적어주세요.
게시물이 없습니다
상품에 대해 궁금한 점을 해결해 드립니다.
게시물이 없습니다