Crystal size | ~8 mm |
Electrical properties | Semiconductor, n-type |
Crystal structure | Triclinic |
Unit cell parameters | a = 0.658 nm, b = 0.670 nm, c = 0.672 nm, α = 91.75°, β = 105°, γ = 118.9° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX, Hall measurement |
More information? | Please contact us by email or phone |
Click on an image to zoom
X-ray diffraction on a ReSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5
Stoichiometric analysis of a single crystal by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal . Measurement was performed with a 785 nm Raman system at room temperature.
1. Chris M. Corbet et al., "Improved contact resistance in ReSe2 thin film field-effect transistors", AAPL 108, 162104 (2016), link to article:
http://scitation.aip.org/content/aip/journal/apl/108/16/10.1063/1.4947468
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