Crystal size | ~10 mm |
Electrical properties | Semiconductor, Topological insulator, Thermoelectric |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.425 nm, c = 3.048 nm, α = β = 90° γ = 120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
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X-ray diffraction on a Sb2Te3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 7 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24
Powder X-ray diffraction (XRD) of a single crystal Sb2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal Sb2Te3 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal Sb2Te3. Measurement was performed with a 785 nm Raman system at room temperature.
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