Typical characteristics of WTe2 crystals from 2Dsemiconductors USA
Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.
XRD data collected from WTe2 crystals (sharpest XRD peaks in the commercial market)
Raman spectrum collected from WTe2 crystals (also sharpest and most defined Raman signal from commercial WTe2 crystals)
EDS spectrum collected from WTe2 crystals
Partial List of Published Articles Using Our WTe2 Crystals (as of 2017)
L. A. Walsh et. al. "WTe2 thin films grown by beam-interrupted molecular beam epitaxy" 2Dmaterials, 4, 2 (2017)
P. Lu et.al. Origin of superconductivity in the Weyl semimetal WTe2 under pressure, Phys. Rev. B. 94, 224512 (2016)
M. Kim et. al. Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy, 2D Materials, Volume 3, Number 3
Y. Kim. et.al. Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe2, Nanoscale, 2016,8, 2309-2316
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