상품명 | Full Area Coverage Few-layer MoS2 |
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상품요약정보 | Full Area Coverage Few-layer MoS2 |
국내·해외배송 | 국내배송 |
배송방법 | 택배 |
배송비 | 2,500원 (50,000원 이상 구매 시 무료) |
SNS 상품홍보 | |
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상품명 | 상품수 | 가격 |
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Full Area Coverage Few-layer MoS2 | 0 ( ) |
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This product contains full area coverage MoS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other substrates by polymer assisted transfer technique on demand (please select from the drop down menu). The sample measures 1cm2 in size and the entire sample surface contains few-layer thick MoS2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Raman, EDS, and XRD measurements. Please see the datasets in the product images.
Growth method: Our company synthesizes these few layers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). Other sources typically use MOCVD or sputtering process wherein defects are very large, domain sizes are small (10nm-500nm), and products are non-layered. Our samples are always highly crystallized, high purity, and perfectly layered.
Sample Properties
Sample size | 1cm x 1cm square shaped |
Substrate type | Thermal oxide (SiO2/Si) substrates |
Coverage | Full Coverage few layers |
Electrical properties | Indirect gap semiconductor |
Crystal structure | Hexagonal Phase |
Unit cell parameters | a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120° |
Production method | Chemical Vapor Deposition (CVD) |
Characterization methods | Raman, photoluminescence, TEM, EDS |
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번호 | 카테고리 | 제목 | 작성자 | 작성일 | 조회 |
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1 | 구매 문의 드립니다. | 최**** | 2024-02-06 | 3 |