Crystal size | ~10 mm |
Electrical properties | Semiconductor |
Crystal structure | Hexagonal |
Unit cell parameters | a = b = 0.363 nm, c = 0.586 nm, α = β = 90°, γ = 120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system
Click on an image to zoom
X-ray diffraction on a HfS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4
Powder X-ray diffraction (XRD) of a single crystal HfS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Raman spectrum of a single crystal HfS2. Measurement was performed with a 785 nm Raman system at room temperature.
1. Toru Kanazawa et al., "Few-layer HfS2 transistors", Sci. Rep. 2016, 6: 22277 (2016), link to article:
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772098/
2. Kai Xu et al., "Ultrasensitive Phototransistors Based on Few-Layered HfS2", Adv. Mat. 27, 7881-7887 (2015), link to article:
hhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201503864/full
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